Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
DOI: 10.1143/jjap.47.8003Author: Yuji Urabe et al.Published: 2008-10-1

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DOI: 10.1143/jjap.47.8003Author: Yuji Urabe et al.Published: 2008-10-1

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    Title: Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
    Journal: Japanese Journal of Applied Physics
    Authors: Yuji Urabe, Toshiyuki Sameshima, Katsuyuki Motai, Koji Ichimura
    Date: 2008-10-1
    DOI: 10.1143/jjap.47.8003
    Source: IOP Publishing
    Source URL: https://doi.org/10.1143/jjap.47.8003

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